Journalartikel
Autorenliste: Stefanescu, Eliade; Scheid, Werner
Jahr der Veröffentlichung: 2007
Seiten: 203-210
Zeitschrift: Physica A: Statistical Mechanics and its Applications
Bandnummer: 374
Heftnummer: 1
ISSN: 0378-4371
DOI Link: https://doi.org/10.1016/j.physa.2006.07.014
Verlag: Elsevier
Abstract:
We propose a semiconductor device with two p-i-n junctions maintained at two different temperatures. When the current injected in the device due to this temperature difference exceeds a threshold value, a superradiant field is created in the first gate that induces an additional current in the second gate. The injection current is amplified by this reaction loop. In this way, the heat flow between the two junctions is partially transformed in superradiant power. (c) 2006 Elsevier B.V. All rights reserved.
Zitierstile
Harvard-Zitierstil: Stefanescu, E. and Scheid, W. (2007) Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons, Physica A: Statistical Mechanics and its Applications, 374(1), pp. 203-210. https://doi.org/10.1016/j.physa.2006.07.014
APA-Zitierstil: Stefanescu, E., & Scheid, W. (2007). Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons. Physica A: Statistical Mechanics and its Applications. 374(1), 203-210. https://doi.org/10.1016/j.physa.2006.07.014
Schlagwörter
CAVITY; fermions; FERMI SYSTEM; GAP; master equation; p-i-n structure; quantum dot; SUPERFLUORESCENCE; superradiance; SUPER-RADIANCE
