Journal article
Authors list: Stefanescu, Eliade; Scheid, Werner
Publication year: 2007
Pages: 203-210
Journal: Physica A: Statistical Mechanics and its Applications
Volume number: 374
Issue number: 1
ISSN: 0378-4371
DOI Link: https://doi.org/10.1016/j.physa.2006.07.014
Publisher: Elsevier
Abstract:
We propose a semiconductor device with two p-i-n junctions maintained at two different temperatures. When the current injected in the device due to this temperature difference exceeds a threshold value, a superradiant field is created in the first gate that induces an additional current in the second gate. The injection current is amplified by this reaction loop. In this way, the heat flow between the two junctions is partially transformed in superradiant power. (c) 2006 Elsevier B.V. All rights reserved.
Citation Styles
Harvard Citation style: Stefanescu, E. and Scheid, W. (2007) Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons, Physica A: Statistical Mechanics and its Applications, 374(1), pp. 203-210. https://doi.org/10.1016/j.physa.2006.07.014
APA Citation style: Stefanescu, E., & Scheid, W. (2007). Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons. Physica A: Statistical Mechanics and its Applications. 374(1), 203-210. https://doi.org/10.1016/j.physa.2006.07.014
Keywords
CAVITY; fermions; FERMI SYSTEM; GAP; master equation; p-i-n structure; quantum dot; SUPERFLUORESCENCE; superradiance; SUPER-RADIANCE
