Konferenzpaper

Jahr der Veröffentlichung: 2003

Seiten: 2075-2079

Zeitschrift: Journal of Physics and Chemistry of Solids

Bandnummer: 64

Heftnummer: 9-10

ISSN: 0022-3697

DOI Link: https://doi.org/10.1016/S0022-3697(03)00207-5

Konferenz: 13th International Conference on Ternary and Multinary Compounds

Verlag: Elsevier

Abstract: 
As a preliminary step towards superstrate-type solar cells, we fabricated films of a CuInS2/ZnO:Al/float glass configuration. A layer of aluminum doped ZnO (ZnO:Al) with a thickness of 320-450 nm was first prepared on float glass at 200 degreesC by mid-frequency magnetron reactive sputtering. Then, a CuInS2 layer, typically 500 nm thick, was deposited on this buffer at 200 degreesC by radio frequency reactive sputtering. X-ray diffraction revealed that the as-sputtered CuInS2 films are of chalcopyrite crystalline phase with a highly (112) preferential orientation. The surface morphology and microstructure of the films were characterized by atomic force microscopy and scanning electron microscopy, respectively. The as-sputtered layers are typically very homogeneous in depth as examined by secondary ion mass spectrometry. After anneal at 500 degreesC for 2 h, the sputtered CuInS2 films feature a sharp fundamental absorption edge at 1.49 eV, which is suitable for absorbing sunlight from the solar spectrum. (C) 2003 Elsevier Ltd. All rights reserved.

Harvard-Zitierstil: He, Y. and Kriegseis, W. (2003) Deposition of CuInS₂ thin films by RF reactive sputtering with a ZnO:Al buffer layer, Journal of Physics and Chemistry of Solids, 64(9-10), pp. 2075-2079. https://doi.org/10.1016/S0022-3697(03)00207-5

APA-Zitierstil: He, Y., & Kriegseis, W. (2003). Deposition of CuInS₂ thin films by RF reactive sputtering with a ZnO:Al buffer layer. Journal of Physics and Chemistry of Solids. 64(9-10), 2075-2079. https://doi.org/10.1016/S0022-3697(03)00207-5