Journalartikel

Jahr der Veröffentlichung: 2002

Seiten: L484-L486

Zeitschrift: Japanese Journal of Applied Physics

Bandnummer: 41

Heftnummer: 4B

ISSN: 0021-4922

DOI Link: https://doi.org/10.1143/JJAP.41.L484

Verlag: IOP Publishing

Abstract: 
We demonstrate the first one-stage growth of CulnS(2) films by radio frequency (RF) reactive sputtering with a Cu-In alloy target and H2S gas. High quality films of good adhesion can be sputtered either on bare float glass at a minimum substrate temperature of 400degreesC or on Mo- or ZnO-coated float glass at a relatively low temperature of 200degreesC. X-ray diffraction results revealed that the films sputtered on the bare, Mo- or ZnO-coated float glass substrates are highly (112) oriented. Typically the as-deposited films are slightly Cu-rich as determined by Rutherford backscattering spectroscopy. The Surface morphology and homogeneity of the layers were as well analyzed by atomic force microscopy and secondary ion mass spectroscopy.

Harvard-Zitierstil: He, Y., Krämer, T., Österreicher, I., Polity, A., Gregor, R., Kriegseis, W., et al. (2002) Highly (112)-oriented CuInS₂ thin films deposited by a one-stage RF reactive sputtering process, Japanese Journal of Applied Physics, 41(4B), pp. L484-L486. https://doi.org/10.1143/JJAP.41.L484

APA-Zitierstil: He, Y., Krämer, T., Österreicher, I., Polity, A., Gregor, R., Kriegseis, W., Hasselkamp, D., & Meyer, B. (2002). Highly (112)-oriented CuInS₂ thin films deposited by a one-stage RF reactive sputtering process. Japanese Journal of Applied Physics. 41(4B), L484-L486. https://doi.org/10.1143/JJAP.41.L484