Journalartikel

Jahr der Veröffentlichung: 2002

Seiten: 226-231

Zeitschrift: Thin Solid Films

Bandnummer: 402

Heftnummer: 1-2

ISSN: 0040-6090

DOI Link: https://doi.org/10.1016/S0040-6090(01)01603-0

Verlag: Elsevier

Abstract: 
Fluorine- and tungsten-doped vanadium dioxide (VO2) is a promising coating material for applications as energy-conserving windows. We prepared VO2 films simultaneously co-doped with fluorine and tungsten and report on the results of optical measurements and photoelectron spectrometry. A comparison is given to single-element doping. Clear evidence for an interaction of fluorine and tungsten in VO2 is found in the switching behaviour at the semiconductor-to-metal phase transition. An explanation is given based on two different effects of fluorine incorporation observed in the ultraviolet photoelectron spectrometry results. Concerning other film properties, the two elements act independently of each other. (C) 2002 Elsevier Science B.V All rights reserved.

Harvard-Zitierstil: Burkhardt, W., Christmann, T., Franke, S., Kriegseis, W., Meister, D., Meyer, B., et al. (2002) Tungsten and fluorine co-doping of VO₂ films, Thin Solid Films, 402(1-2), pp. 226-231. https://doi.org/10.1016/S0040-6090(01)01603-0

APA-Zitierstil: Burkhardt, W., Christmann, T., Franke, S., Kriegseis, W., Meister, D., Meyer, B., Niessner, W., Schalch, D., & Scharmann, A. (2002). Tungsten and fluorine co-doping of VO₂ films. Thin Solid Films. 402(1-2), 226-231. https://doi.org/10.1016/S0040-6090(01)01603-0