Conference paper
Authors list: Meyer, BK; Hofmann, DM; Volm, D; Chen, WM; Son, NT; Janzén, E
Editor list: Carter, CH; Devaty, RP; Rohrer, GS
Publication year: 2000
Pages: 559-562
Journal: Materials Science Forum
Volume number: 338-3
ISSN: 0255-5476
ISBN: *************
DOI Link: https://doi.org/10.4028/www.scientific.net/MSF.338-342.559
Conference: International Conference on Silicon Carbide and Related Materials
Publisher: Trans Tech Publications
Title of series: MATERIALS SCIENCE FORUM
Abstract:
We present experimental data on the bandstructure and high mobility transport properties of 6H and 4H-SiC epitaxial films based on optically detected cyclotron resonance investigations. From the orientational dependence of the electron effective mass in 6H-SiC we obtain direct evidence for the camels back nature of the conduction band between the M- and L-points. The broadening of the resonance signal in 4H-SiC as a function of temperature is used to extract information on electron mobilities and to conclude on the role of the different scattering mechanisms.
Citation Styles
Harvard Citation style: Meyer, B., Hofmann, D., Volm, D., Chen, W., Son, N. and Janzén, E. (2000) Bandstructure and transport properties of 4H-and 6H-SiC:: Optically detected cyclotron resonance investigations, Materials Science Forum, 338-3, pp. 559-562. https://doi.org/10.4028/www.scientific.net/MSF.338-342.559
APA Citation style: Meyer, B., Hofmann, D., Volm, D., Chen, W., Son, N., & Janzén, E. (2000). Bandstructure and transport properties of 4H-and 6H-SiC:: Optically detected cyclotron resonance investigations. Materials Science Forum. 338-3, 559-562. https://doi.org/10.4028/www.scientific.net/MSF.338-342.559
Keywords
6H; BAND-STRUCTURE; carrier scattering; cyclotron resonance; effective mass; EFFECTIVE MASSES; SiC
