Konferenzpaper

Herausgeberliste: Carter, CH; Devaty, RP; Rohrer, GS

Jahr der Veröffentlichung: 2000

Seiten: 559-562

Zeitschrift: Materials Science Forum

Bandnummer: 338-3

ISSN: 0255-5476

ISBN: *************

DOI Link: https://doi.org/10.4028/www.scientific.net/MSF.338-342.559

Konferenz: International Conference on Silicon Carbide and Related Materials

Verlag: Trans Tech Publications

Serientitel: MATERIALS SCIENCE FORUM

Abstract: 
We present experimental data on the bandstructure and high mobility transport properties of 6H and 4H-SiC epitaxial films based on optically detected cyclotron resonance investigations. From the orientational dependence of the electron effective mass in 6H-SiC we obtain direct evidence for the camels back nature of the conduction band between the M- and L-points. The broadening of the resonance signal in 4H-SiC as a function of temperature is used to extract information on electron mobilities and to conclude on the role of the different scattering mechanisms.

Harvard-Zitierstil: Meyer, B., Hofmann, D., Volm, D., Chen, W., Son, N. and Janzén, E. (2000) Bandstructure and transport properties of 4H-and 6H-SiC:: Optically detected cyclotron resonance investigations, Materials Science Forum, 338-3, pp. 559-562. https://doi.org/10.4028/www.scientific.net/MSF.338-342.559

APA-Zitierstil: Meyer, B., Hofmann, D., Volm, D., Chen, W., Son, N., & Janzén, E. (2000). Bandstructure and transport properties of 4H-and 6H-SiC:: Optically detected cyclotron resonance investigations. Materials Science Forum. 338-3, 559-562. https://doi.org/10.4028/www.scientific.net/MSF.338-342.559