Konferenzpaper

Adsorption and decomposition of methane on gallium oxide films


AutorenlisteKohl, D; Ochs, T; Geyer, W; Fleischer, M; Meixner, H

Jahr der Veröffentlichung1999

Seiten140-145

ZeitschriftSensors and Actuators B: Chemical

Bandnummer59

Heftnummer2-3

ISSN0925-4005

DOI Linkhttps://doi.org/10.1016/S0925-4005(99)00211-7

KonferenzConference on Pollution Sensors for Environment - New Trends (POLCAP 98)

VerlagElsevier


Abstract
Surface reactions are investigated by a sensitive mass spectrometer. Ga2O3 films are exposed to square pulses of methane. From the experimental data the desorption energies and the frequency factors are calculated for H2O and CO2. Semiempirical Hartree-Fock calculations with the Modified Neglect of Diatomic Overlap - Parametric Method 3 (MNDO-PM3) method give information about the adsorption process. The energy gain of physisorption amounts to 0.27 eV. The Heat of Formation (HoF) of the chemisorbed CH3 group and the H atom is 4.05 eV lower in comparison to the value of the physisorbed methane. After the COlatt, group formation the energy gain is 7.33 eV. The binding energy of the formed COlatt, is calculated to 2.07 eV. The charge transfer is estimated using the Mulliken charges. A reaction scheme for the catalytic oxidation of methane by lattice oxygen is proposed. (C) 1999 Elsevier Science S.A. All rights reserved.



Zitierstile

Harvard-ZitierstilKohl, D., Ochs, T., Geyer, W., Fleischer, M. and Meixner, H. (1999) Adsorption and decomposition of methane on gallium oxide films, Sensors and Actuators B: Chemical, 59(2-3), pp. 140-145. https://doi.org/10.1016/S0925-4005(99)00211-7

APA-ZitierstilKohl, D., Ochs, T., Geyer, W., Fleischer, M., & Meixner, H. (1999). Adsorption and decomposition of methane on gallium oxide films. Sensors and Actuators B: Chemical. 59(2-3), 140-145. https://doi.org/10.1016/S0925-4005(99)00211-7



Schlagwörter


GA2O3surface reactions


Nachhaltigkeitsbezüge


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