Journalartikel

Jahr der Veröffentlichung: 1998

Seiten: 131-142

Zeitschrift: physica status solidi (a) – applications and materials science

Bandnummer: 167

Heftnummer: 1

ISSN: 0031-8965

Verlag: Wiley

Abstract: 
Cu-rich and nearly stoichiometric CuIn(Ga)Se-2 thin films prepared by the rapid thermal process (RTP) are investigated by electrical and optical methods. The experiments yield that three phases are present in the layers. Cu2-xSe, which determines the conductivity of the layers but does not contribute to the radiative recombinations is observed. CuIn1-xGaxSe2 causes a broad unstructured radiative recombination with a peak energy in the range from 1.0 to 1.1 eV, dependent on x. Recombinations with zero-phonon lines at 0.96 and 0.90 eV arise from CuInSe2. They involve a shallow donor with a binding energy of (10 +/- 5) meV and two accepters with binding energies of (75 +/- 10) meV and (140 +/- 10) meV, respectively. All features of these recombinations are well described in the donor-acceptor pair recombination model.