Konferenzpaper

Jahr der Veröffentlichung: 1998

Seiten: 1118-1122

Zeitschrift: Journal of Crystal Growth

Bandnummer: 184

ISSN: 0022-0248

DOI Link: https://doi.org/10.1016/S0022-0248(97)00742-2

Konferenz: 8th International Conference on II-VI Compounds

Verlag: Elsevier

Abstract: 
We determined the temperature dependence of the electron (donor) Lande factor (g*) in bulk CdTe by electron paramagnetic resonance experiments. In the temperature range from 4.2 to 66K the dependence is g* = -1.682 + 2.97 x 10(-4) T. The results are in qualitative agreement with recent spin-quantum-beat experiments. Possibilities to account for this behaviour in k.p calculations are suggested. (C) 1998 Elsevier Science B.V. All rights reserved.

Harvard-Zitierstil: Meyer, B., Hofstaetter, A., Leib, U. and Hofmann, D. (1998) The temperature dependence of the electron g-factor in CdTe, Journal of Crystal Growth, 184, pp. 1118-1122. https://doi.org/10.1016/S0022-0248(97)00742-2

APA-Zitierstil: Meyer, B., Hofstaetter, A., Leib, U., & Hofmann, D. (1998). The temperature dependence of the electron g-factor in CdTe. Journal of Crystal Growth. 184, 1118-1122. https://doi.org/10.1016/S0022-0248(97)00742-2