Konferenzpaper

Herausgeberliste: Pensl, G; Morkoc, H; Monemar, B; Janzen, E

Jahr der Veröffentlichung: 1998

Seiten: 595-598

Zeitschrift: Materials Science Forum

Bandnummer: 264-2

ISSN: 0255-5476

ISBN: 0-87849-790-0

DOI Link: https://doi.org/10.4028/www.scientific.net/MSF.264-268.595

Konferenz: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97)

Verlag: Trans Tech Publications

Serientitel: MATERIALS SCIENCE FORUM

Abstract: 
An ENDOR investigation has been performed on the shallow boron acceptor in 3C-SiC. For both isotopes (B-10 and B-11) hyperfine and quadrupole parameters were determined with high precision. Their comparison reveals practically no difference, limiting a possible isotope effect on the centre structure to about 5%. For Be doped 6H-SiC the combination of ENDOR and a precise X-band EPR measurement allowed the unambiguous identification of the beryllium acceptor at the hexagonal site and the evaluation of its g-, hyperfine and quadrupole data. For Be at the two quasi-cubic sites an estimation is given.

Harvard-Zitierstil: Hofstaetter, A., Meyer, B., Scharmann, A., Baranov, P., Ilyin, I. and Mokhov, E. (1998) X-band ENDOR of boron and beryllium acceptors in silicon carbide, Materials Science Forum, 264-2, pp. 595-598. https://doi.org/10.4028/www.scientific.net/MSF.264-268.595

APA-Zitierstil: Hofstaetter, A., Meyer, B., Scharmann, A., Baranov, P., Ilyin, I., & Mokhov, E. (1998). X-band ENDOR of boron and beryllium acceptors in silicon carbide. Materials Science Forum. 264-2, 595-598. https://doi.org/10.4028/www.scientific.net/MSF.264-268.595