Konferenzpaper

Herausgeberliste: Pensl, G; Morkoc, H; Monemar, B; Janzen, E

Jahr der Veröffentlichung: 1998

Seiten: 591-594

Zeitschrift: Materials Science Forum

Bandnummer: 264-2

ISSN: 0255-5476

ISBN: 0-87849-790-0

DOI Link: https://doi.org/10.4028/www.scientific.net/MSF.264-268.591

Konferenz: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97)

Verlag: Trans Tech Publications

Serientitel: MATERIALS SCIENCE FORUM

Abstract: 
Using electron paramagnetic (EPR) and electron nuclear double resonance (ENDOR) we identify an Aluminum related deep defect in 4H-SiC. In samples from different vendors the concentration of the deep Al defect equals or even exceeds the shallow Al acceptor concentration.

Harvard-Zitierstil: Meyer, B., Hofstaetter, A. and Baranov, P. (1998) On the identification of an Al related deep centre in 4H-SiC - Self-compensation in SiC?, Materials Science Forum, 264-2, pp. 591-594. https://doi.org/10.4028/www.scientific.net/MSF.264-268.591

APA-Zitierstil: Meyer, B., Hofstaetter, A., & Baranov, P. (1998). On the identification of an Al related deep centre in 4H-SiC - Self-compensation in SiC?. Materials Science Forum. 264-2, 591-594. https://doi.org/10.4028/www.scientific.net/MSF.264-268.591