Conference paper
Authors list: Meyer, BK; Hofstaetter, A; Baranov, PG
Editor list: Pensl, G; Morkoc, H; Monemar, B; Janzen, E
Publication year: 1998
Pages: 591-594
Journal: Materials Science Forum
Volume number: 264-2
ISSN: 0255-5476
ISBN: 0-87849-790-0
DOI Link: https://doi.org/10.4028/www.scientific.net/MSF.264-268.591
Conference: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97)
Publisher: Trans Tech Publications
Title of series: MATERIALS SCIENCE FORUM
Abstract:
Using electron paramagnetic (EPR) and electron nuclear double resonance (ENDOR) we identify an Aluminum related deep defect in 4H-SiC. In samples from different vendors the concentration of the deep Al defect equals or even exceeds the shallow Al acceptor concentration.
Citation Styles
Harvard Citation style: Meyer, B., Hofstaetter, A. and Baranov, P. (1998) On the identification of an Al related deep centre in 4H-SiC - Self-compensation in SiC?, Materials Science Forum, 264-2, pp. 591-594. https://doi.org/10.4028/www.scientific.net/MSF.264-268.591
APA Citation style: Meyer, B., Hofstaetter, A., & Baranov, P. (1998). On the identification of an Al related deep centre in 4H-SiC - Self-compensation in SiC?. Materials Science Forum. 264-2, 591-594. https://doi.org/10.4028/www.scientific.net/MSF.264-268.591
Keywords
deep defect; ENDOR; hyperfine interaction
