Conference paper

Editor list: Davies, G; Nazare, MH

Publication year: 1997

Pages: 1473-1478

Journal: Materials Science Forum

Volume number: 258-2

ISSN: 0255-5476

ISBN: 0-87849-786-2

DOI Link: https://doi.org/10.4028/www.scientific.net/MSF.258-263.1473

Conference: 19th International Conference on Defects in Semiconductors (ICDS-19)

Publisher: Trans Tech Publications

Title of series: MATERIALS SCIENCE FORUM

Abstract: 
We report on electron paramagnetic resonance (EPR) investigations of beta-Ga2O3 single crystals which behave under suitable preparation conditions insulating or conducting. We identify as trace impurities Iron, Chromium and Titanium in the 3+ charge states. The EPR of the shallow donor which in conducting crystals exhibits properties of electrons in the conduction band is studied in detail. Its linewidth is independent of temperature from 4.2 to room temperature. The resonance position depends however on temperature, but can be explained by a nuclear hyperfine interaction due to the Overhauser effect.

Harvard Citation style: Meyer, B., Leib, U., Hofstaetter, A., Krummel, C. and Kohl, D. (1997) Defects spectroscopy in β-Ga₂O₃, Materials Science Forum, 258-2, pp. 1473-1478. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1473

APA Citation style: Meyer, B., Leib, U., Hofstaetter, A., Krummel, C., & Kohl, D. (1997). Defects spectroscopy in β-Ga₂O₃. Materials Science Forum. 258-2, 1473-1478. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1473