Konferenzpaper

Defects spectroscopy in β-Ga2O3


AutorenlisteMeyer, BK; Leib, U; Hofstaetter, A; Krummel, C; Kohl, D

HerausgeberlisteDavies, G; Nazare, MH

Jahr der Veröffentlichung1997

Seiten1473-1478

ZeitschriftMaterials Science Forum

Bandnummer258-2

ISSN0255-5476

ISBN0-87849-786-2

DOI Linkhttps://doi.org/10.4028/www.scientific.net/MSF.258-263.1473

Konferenz19th International Conference on Defects in Semiconductors (ICDS-19)

VerlagTrans Tech Publications

SerientitelMATERIALS SCIENCE FORUM


Abstract
We report on electron paramagnetic resonance (EPR) investigations of beta-Ga2O3 single crystals which behave under suitable preparation conditions insulating or conducting. We identify as trace impurities Iron, Chromium and Titanium in the 3+ charge states. The EPR of the shallow donor which in conducting crystals exhibits properties of electrons in the conduction band is studied in detail. Its linewidth is independent of temperature from 4.2 to room temperature. The resonance position depends however on temperature, but can be explained by a nuclear hyperfine interaction due to the Overhauser effect.



Zitierstile

Harvard-ZitierstilMeyer, B., Leib, U., Hofstaetter, A., Krummel, C. and Kohl, D. (1997) Defects spectroscopy in β-Ga2O3, Materials Science Forum, 258-2, pp. 1473-1478. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1473

APA-ZitierstilMeyer, B., Leib, U., Hofstaetter, A., Krummel, C., & Kohl, D. (1997). Defects spectroscopy in β-Ga2O3. Materials Science Forum. 258-2, 1473-1478. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1473



Schlagwörter


BETA-GA2O3ELECTRONMagnetic resonancevacancy


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