Konferenzpaper
Autorenliste: Meyer, BK; Leib, U; Hofstaetter, A; Krummel, C; Kohl, D
Herausgeberliste: Davies, G; Nazare, MH
Jahr der Veröffentlichung: 1997
Seiten: 1473-1478
Zeitschrift: Materials Science Forum
Bandnummer: 258-2
ISSN: 0255-5476
ISBN: 0-87849-786-2
DOI Link: https://doi.org/10.4028/www.scientific.net/MSF.258-263.1473
Konferenz: 19th International Conference on Defects in Semiconductors (ICDS-19)
Verlag: Trans Tech Publications
Serientitel: MATERIALS SCIENCE FORUM
Abstract:
We report on electron paramagnetic resonance (EPR) investigations of beta-Ga2O3 single crystals which behave under suitable preparation conditions insulating or conducting. We identify as trace impurities Iron, Chromium and Titanium in the 3+ charge states. The EPR of the shallow donor which in conducting crystals exhibits properties of electrons in the conduction band is studied in detail. Its linewidth is independent of temperature from 4.2 to room temperature. The resonance position depends however on temperature, but can be explained by a nuclear hyperfine interaction due to the Overhauser effect.
Zitierstile
Harvard-Zitierstil: Meyer, B., Leib, U., Hofstaetter, A., Krummel, C. and Kohl, D. (1997) Defects spectroscopy in β-Ga2O3, Materials Science Forum, 258-2, pp. 1473-1478. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1473
APA-Zitierstil: Meyer, B., Leib, U., Hofstaetter, A., Krummel, C., & Kohl, D. (1997). Defects spectroscopy in β-Ga2O3. Materials Science Forum. 258-2, 1473-1478. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1473
Schlagwörter
BETA-GA2O3; ELECTRON; Magnetic resonance; vacancy