Conference paper
Authors list: Wimbauer, T; Brandt, MS; Bayerl, MW; Stutzmann, M; Hofmann, DM; Mochizuki, Y; Mizuta, M
Editor list: Davies, G; Nazare, MH
Publication year: 1997
Pages: 1309-1314
Journal: Materials Science Forum
Volume number: 258-2
ISSN: 0255-5476
ISBN: 0-87849-786-2
DOI Link: https://doi.org/10.4028/www.scientific.net/MSF.258-263.1309
Conference: 19th International Conference on Defects in Semiconductors (ICDS-19)
Publisher: Trans Tech Publications
Title of series: MATERIALS SCIENCE FORUM
Abstract:
We have performed a comparative optically and electrically detected magnetic resonance study (ODMR and EDMR) on GaAs/AlGaAs heterostructures containing a 50 nm GaAs quantum-well codoped with Si and Be. The donor-acceptor-pair recombination serves as a sensitive detection channel for the ODMR experiments and reveals the presence of Ga interstitials in the GaAs quantum well. The signals observed in EDMR depend sensitively on the chosen experimental conditions. Dependent on the localization of the recombination current in the heterostructure, two cases can be distinguished. Cr4+, well as arsenic antisite defects are observed for conditions where the current is dominantly driven through the semiinsulating substrate, whereas Ga interstitials were detected for conditions including a recombination current in the quantum well. These results indicate the large potential of EDMR in view of a selective detection of defects in complicated sample structures.
Citation Styles
Harvard Citation style: Wimbauer, T., Brandt, M., Bayerl, M., Stutzmann, M., Hofmann, D., Mochizuki, Y., et al. (1997) Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance, Materials Science Forum, 258-2, pp. 1309-1314. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1309
APA Citation style: Wimbauer, T., Brandt, M., Bayerl, M., Stutzmann, M., Hofmann, D., Mochizuki, Y., & Mizuta, M. (1997). Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance. Materials Science Forum. 258-2, 1309-1314. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1309
Keywords
GAAS; optically and electrically detected magnetic resonance
