Konferenzpaper

Herausgeberliste: Davies, G; Nazare, MH

Jahr der Veröffentlichung: 1997

Seiten: 1309-1314

Zeitschrift: Materials Science Forum

Bandnummer: 258-2

ISSN: 0255-5476

ISBN: 0-87849-786-2

DOI Link: https://doi.org/10.4028/www.scientific.net/MSF.258-263.1309

Konferenz: 19th International Conference on Defects in Semiconductors (ICDS-19)

Verlag: Trans Tech Publications

Serientitel: MATERIALS SCIENCE FORUM

Abstract: 
We have performed a comparative optically and electrically detected magnetic resonance study (ODMR and EDMR) on GaAs/AlGaAs heterostructures containing a 50 nm GaAs quantum-well codoped with Si and Be. The donor-acceptor-pair recombination serves as a sensitive detection channel for the ODMR experiments and reveals the presence of Ga interstitials in the GaAs quantum well. The signals observed in EDMR depend sensitively on the chosen experimental conditions. Dependent on the localization of the recombination current in the heterostructure, two cases can be distinguished. Cr4+, well as arsenic antisite defects are observed for conditions where the current is dominantly driven through the semiinsulating substrate, whereas Ga interstitials were detected for conditions including a recombination current in the quantum well. These results indicate the large potential of EDMR in view of a selective detection of defects in complicated sample structures.

Harvard-Zitierstil: Wimbauer, T., Brandt, M., Bayerl, M., Stutzmann, M., Hofmann, D., Mochizuki, Y., et al. (1997) Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance, Materials Science Forum, 258-2, pp. 1309-1314. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1309

APA-Zitierstil: Wimbauer, T., Brandt, M., Bayerl, M., Stutzmann, M., Hofmann, D., Mochizuki, Y., & Mizuta, M. (1997). Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance. Materials Science Forum. 258-2, 1309-1314. https://doi.org/10.4028/www.scientific.net/MSF.258-263.1309