Journal article

Publication year: 1996

Pages: 754-759

Journal: JETP Letters

Volume number: 64

Issue number: 10

ISSN: 0021-3640

DOI Link: https://doi.org/10.1134/1.567293

Publisher: Springer

Abstract: 
Two types of excitons, localized at opposite interfaces and characterized by different magnitudes of the exchange interactions at the same radiation energies, are simultaneously in type-II GaAs/AlAs superlattices. It is shown that the additional long-wavelength luminescence line in superlattices grown with growth interruptions after the GaAs layers is due to the recombination of an exciton localized at an inverted interface in regions where the quantum-well width is increased by one monolayer. (C) 1996 American Institute of Physics.

Harvard Citation style: Baranov, P., Romanov, N., Hofstaetter, A., Scharmann, A., Schnorr, C., Ahlers, F., et al. (1996) Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing, JETP Letters, 64(10), pp. 754-759. https://doi.org/10.1134/1.567293

APA Citation style: Baranov, P., Romanov, N., Hofstaetter, A., Scharmann, A., Schnorr, C., Ahlers, F., & Pierz, K. (1996). Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing. JETP Letters. 64(10), 754-759. https://doi.org/10.1134/1.567293