Journalartikel
Autorenliste: Baranov, PG; Romanov, NG; Hofstaetter, A; Scharmann, A; Schnorr, C; Ahlers, FJ; Pierz, K
Jahr der Veröffentlichung: 1996
Seiten: 754-759
Zeitschrift: JETP Letters
Bandnummer: 64
Heftnummer: 10
ISSN: 0021-3640
DOI Link: https://doi.org/10.1134/1.567293
Verlag: Springer
Abstract:
Two types of excitons, localized at opposite interfaces and characterized by different magnitudes of the exchange interactions at the same radiation energies, are simultaneously in type-II GaAs/AlAs superlattices. It is shown that the additional long-wavelength luminescence line in superlattices grown with growth interruptions after the GaAs layers is due to the recombination of an exciton localized at an inverted interface in regions where the quantum-well width is increased by one monolayer. (C) 1996 American Institute of Physics.
Zitierstile
Harvard-Zitierstil: Baranov, P., Romanov, N., Hofstaetter, A., Scharmann, A., Schnorr, C., Ahlers, F., et al. (1996) Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing, JETP Letters, 64(10), pp. 754-759. https://doi.org/10.1134/1.567293
APA-Zitierstil: Baranov, P., Romanov, N., Hofstaetter, A., Scharmann, A., Schnorr, C., Ahlers, F., & Pierz, K. (1996). Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing. JETP Letters. 64(10), 754-759. https://doi.org/10.1134/1.567293