Journalartikel

Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing


AutorenlisteBaranov, PG; Romanov, NG; Hofstaetter, A; Scharmann, A; Schnorr, C; Ahlers, FJ; Pierz, K

Jahr der Veröffentlichung1996

Seiten754-759

ZeitschriftJETP Letters

Bandnummer64

Heftnummer10

ISSN0021-3640

DOI Linkhttps://doi.org/10.1134/1.567293

VerlagSpringer


Abstract
Two types of excitons, localized at opposite interfaces and characterized by different magnitudes of the exchange interactions at the same radiation energies, are simultaneously in type-II GaAs/AlAs superlattices. It is shown that the additional long-wavelength luminescence line in superlattices grown with growth interruptions after the GaAs layers is due to the recombination of an exciton localized at an inverted interface in regions where the quantum-well width is increased by one monolayer. (C) 1996 American Institute of Physics.



Zitierstile

Harvard-ZitierstilBaranov, P., Romanov, N., Hofstaetter, A., Scharmann, A., Schnorr, C., Ahlers, F., et al. (1996) Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing, JETP Letters, 64(10), pp. 754-759. https://doi.org/10.1134/1.567293

APA-ZitierstilBaranov, P., Romanov, N., Hofstaetter, A., Scharmann, A., Schnorr, C., Ahlers, F., & Pierz, K. (1996). Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing. JETP Letters. 64(10), 754-759. https://doi.org/10.1134/1.567293


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