Accommodation in Ar(Kr, Xe) and metal-surface systems as a test for electronic dissipation - Forschungsportal der Justus-Liebig-Universität Gießen:

Konferenzpaper

Accommodation in Ar(Kr, Xe) and metal-surface systems as a test for electronic dissipation

Autorenliste: Bärwinkel, K; Schippers, S

Jahr der Veröffentlichung: 1990

Seiten: 396-398

Zeitschrift: Vacuum

Bandnummer: 41

Heftnummer: 1-3

ISSN: 0042-207X

DOI Link: https://doi.org/10.1016/0042-207X(90)90369-A

Konferenz: 11th International Vacuum Congress ( ICV-11 ), 7th International Conference on Solid Surfaces (ICSS-7)

Verlag: Elsevier

Abstract:

A reinterpretation of experimental results on energy accommodation for the gas-surface systems Ar single bond W, KrW, and XeW is provided in the frame of the scattering kernel formalism. A threshold velocity for trapping can be drawn from the analysis. This threshold is explained on the basis of charge transfer and electronic relaxation during scattering.

Autoren/Herausgeber

- apl.-Prof. Dr. habil. (F.A.P.S.) Stefan Ewald Schippers

Zitierstile

Harvard-Zitierstil: Bärwinkel, K. and Schippers, S. (1990) Accommodation in Ar(Kr, Xe) and metal-surface systems as a test for electronic dissipation, Vacuum, 41(1-3), pp. 396-398. https://doi.org/10.1016/0042-207X(90)90369-A

APA-Zitierstil: Bärwinkel, K., & Schippers, S. (1990). Accommodation in Ar(Kr, Xe) and metal-surface systems as a test for electronic dissipation. Vacuum. 41(1-3), 396-398. https://doi.org/10.1016/0042-207X(90)90369-A