Conference paper

Accommodation in Ar(Kr, Xe) and metal-surface systems as a test for electronic dissipation


Authors listBärwinkel, K; Schippers, S

Publication year1990

Pages396-398

JournalVacuum

Volume number41

Issue number1-3

ISSN0042-207X

DOI Linkhttps://doi.org/10.1016/0042-207X(90)90369-A

Conference11th International Vacuum Congress ( ICV-11 ), 7th International Conference on Solid Surfaces (ICSS-7)

PublisherElsevier


Abstract

A reinterpretation of experimental results on energy accommodation for the gas-surface systems Arsingle bondW, Krsingle bondW, and Xesingle bondW is provided in the frame of the scattering kernel formalism. A threshold velocity for trapping can be drawn from the analysis. This threshold is explained on the basis of charge transfer and electronic relaxation during scattering.




Citation Styles

Harvard Citation styleBärwinkel, K. and Schippers, S. (1990) Accommodation in Ar(Kr, Xe) and metal-surface systems as a test for electronic dissipation, Vacuum, 41(1-3), pp. 396-398. https://doi.org/10.1016/0042-207X(90)90369-A

APA Citation styleBärwinkel, K., & Schippers, S. (1990). Accommodation in Ar(Kr, Xe) and metal-surface systems as a test for electronic dissipation. Vacuum. 41(1-3), 396-398. https://doi.org/10.1016/0042-207X(90)90369-A


Last updated on 2025-12-06 at 11:13